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Semiconductor-Today.com features work of UNM Research Group
February 17, 2016 - Sharon Steely
Ashwin Rishinaramangalam, Post Doctoral Fellow in Dr. Daniel Feezell's research group at CHTM, reports that their group's work has been covered by Semiconductor-Today.com, a digital-only magazine for the semiconductor and advanced silicon industries. Its circulation is comprised of thousands of scientists, engineers and executives involved in industry manufacturing and R&D.
This work is part of the Lighting Enabled Systems and Applications Engineering Research Center (Formerly, the Smartlighting ERC).
The story is titled, "Triangular nanostructure semi-polar gallium nitride light-emitting diodes" and an excerpt reads:
'University of New Mexico (UNM) in the USA has fabricated triangular-nanostripe core–shell semi-polar III–nitride light-emitting diodes (Figure 1 -- illustration of section of triangular-stripe core–shell nanostructure LED) on c-plane sapphire [Ashwin K. Rishinaramangalam et al, Appl. Phys. Express, vol9, p032101, 2016]. The performance results are described as "preliminary."
Figure 1...The researchers explain: "For low injection currents, the path of least resistance is through the thick, high-indium-content QWs near the apex. This results in longer-wavelength emission (∼480nm) at low current density, primarily from the QWs near the apexes. As the current density is increased, the current spreading across the nanostructure is improved and a short-wavelength EL peak near 425nm emerges. This peak is attributed to the thin, low-indium-content QWs on the main sidewalls of the triangular stripe. The peak near 425nm shows very small shift in wavelength as a function of current density, as expected for uniform semi-polar QWs."
...The researchers comment: "Upon optimization of these TLEDs to being on par with existing technologies on free-standing GaN, the low cost associated with this approach could potentially become the driving force towards commercial adoption."'
Congratulations to the Lighting Enabled Systems and Applications Engineering Research Center! Read the full story at http://www.semiconductor-today.com/news_items/2016/feb/unm_170216.shtml. ©2006-2015 Juno Publishing and Media Solutions Ltd. All rights reserved.
